to-220f plastic-encapsulate diodes mbr3030, 35, 40, 45, 50fct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value unit symbol parameter mbr30 30fct mbr30 35fct mbr30 40fct mbr30 45fct mbr30 50fct v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 v i o average rectified output current 30 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 200 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 to-220f 1. anode 2. cathode 3. a node 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol device test conditions min typ max unit mbr3030fct 30 mbr3035fct 35 mbr3040fct 40 MBR3045FCT 45 reverse voltage v (br) mbr3050fct i r =1ma 50 v mbr3030fct v r =30v mbr3035fct v r =35v mbr3040fct v r =40v MBR3045FCT v r =45v reverse current i r mbr3050fct v r =50v 0.2 ma mbr3030-45fct 0.7 v f1 mbr3050fct i f =15a 0.8 v mbr3030-45fct 0.84 forward voltage v f2 * mbr3050fct i f =30a 0.95 v mbr3030-45fct 450 typical total capacitance c tot * mbr3050fct v r =4v,f=1mhz 400 pf *pulse test: pulse width 300 s, duty cycle 2.0%. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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